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RSR025N03
Transistors
Electrical characteristics (Ta=25 ° C)
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
10
Unit
μ A
Conditions
V GS = 20V, V DS = 0V
Drain-source breakdown voltage V (BR) DSS
30
?
?
V
I D = 1mA, V GS = 0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
I DSS
V GS (th)
R DS (on) ?
?
1.0
?
?
?
?
?
50
74
83
1
2.5
70
105
118
μ A
V
m ?
V DS = 30V, V GS = 0V
V DS = 10V, I D = 1mA
I D = 2.5A, V GS = 10V
I D = 2.5A, V GS = 4.5V
I D = 2.5A, V GS = 4V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Y fs
C iss
C oss
C rss
t d (on)
t r
t d (off)
t f
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
1.5
?
?
?
?
?
?
?
?
?
?
?
165
55
35
6
10
20
5
2.9
0.8
0.9
?
?
?
?
?
?
?
?
4.1
?
?
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
I D = 2.5A, V DS = 10V
V DS = 10V
V GS = 0V
f = 1MHz
I D = 1.25A, V DD 15V
V GS = 10V
R L = 12.0 ?
R G = 10 ?
V DD 15V
V GS = 5V
I D = 2.5A
? Pulsed
Body diode characteristics (Source-Drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
1.2
Unit
V
Conditions
I S = 3.2A, V GS = 0V
? Pulsed
Rev.C
2/3
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